Accession Number : ADA188790

Title :   Thermal Oxide Growth on Silicon: Intrinsic Stress and Silicon Cleaning Effects.

Descriptive Note : Technical rept.,

Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s) : Irene, E A

PDF Url : ADA188790

Report Date : 03 Dec 1987

Pagination or Media Count : 37

Abstract : This paper summarizes the experimental results and discusses the implications of recent research on two topics related to Si oxidation: mechanical stress effects; and the influence of impurities on the Si surface. For stress measurement, a double beam optical technique is used to measure the strain in the Si substrate due to the film stress. An intrinsic SiO2 stress is measured which increases with decreasing oxidation temperature. Controversy exists about whether the intrinsic stress affects transport of oxidant or the interface reaction; arguments for both views are presented. A combination of in-situ ellipsometry and contact angle measurements performed on a Si surface which is immersed in various liquid media has been successfully used to determine the role of HF in Si cleaning process. A fluorocarbon film was found to replace the removed SiO2, and the fluorocarbon renders the Si surface hydrophobic and amenable to the growth of a high quality SiO2 film for device applications. Keywords: Silicon, Silicon oxides.

Descriptors :   *GROWTH(GENERAL), *OXIDES, *SILICON, *SILICON COMPOUNDS, *THERMOCHEMISTRY, ANGLES, CLEANING, ELLIPSOMETERS, FILMS, FLUORINATED HYDROCARBONS, IMPURITIES, INTERFACES, LIQUIDS, MEASUREMENT, MECHANICAL PROPERTIES, OPTICS, OXIDATION, OXIDIZERS, RESPONSE, STRESSES, SUBSTRATES, TEMPERATURE, TRANSPORT

Subject Categories : Inorganic Chemistry
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE