Accession Number : ADA189166
Title : Focused Ion Beam Fabrication of Graded Channel FET's in GaAs and Si.
Descriptive Note : Semiannual technical rept. 1 Jan-30 Jun 87,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
Personal Author(s) : Melngailis, John
PDF Url : ADA189166
Report Date : 30 Jun 1987
Pagination or Media Count : 7
Abstract : The focused ion beam is a unique semiconductor fabrication tool with many applications. Of these, markless/resistless implantation is perhaps the one with the greatest potential impact. It permits implant dose to be varied from point to point on a wafer. Thus devices can be fabricated side by side with different doping densities, and the doping density can be varied from point to point within a device. Thus lateral gradients of doping are possible. The aim of this contract is to produce field effect transistors in GaAs and Si with graded implants from source to drain. To achieve this, alignment procedures have to de developed to permit the focused ion beam implant to be positioned precisely relative to features fabricated by conventional means. In addition, models of the behavior of graded devices have to be developed.
Descriptors : *CHANNELS, *DOPING, *FIELD EFFECT TRANSISTORS, *ION BEAMS, *ION IMPLANTATION, *SEMICONDUCTORS, ALIGNMENT, DENSITY, DOSAGE, DRAINAGE, FABRICATION, FOCUSING, IMPLANTATION, SOURCES, TOOLS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE