Accession Number : ADA189540

Title :   Fundamental Studies and Device Development in Beta Silicon Carbide.

Descriptive Note : Semi-annual progress rept. 1 Feb-31 Aug 87,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Davis, Robert F ; Glass, Jeffrey T ; Carter, Calvin H , Jr

PDF Url : ADA189540

Report Date : 31 Aug 1987

Pagination or Media Count : 135

Abstract : The research of this reporting period has involved (1) the chemical vapor deposition (CVD) of Beta-silicon carbide on off-axis silicon (100), (2) the growth of Beta- and alpha-SiC on monocrystalline alpha-SiC substrates, (3) high temperature ion implantation, and damage production studies, (4) the continued development of contacts for n- and p-type SiC, (5) reactive ion and plasma etching, and (6) the fabrication and evaluation of MESFETs and MOSFETs in Bet-SiC. Keywords: Doping; Aluminum nitride; Electron microscopy; Secondary ion mass spectroscopy; Rutherford back-scattering.

Descriptors :   *ION IMPLANTATION, *SILICON CARBIDES, *VAPOR DEPOSITION, *SEMICONDUCTORS, ALUMINUM COMPOUNDS, CHEMICAL REACTIONS, DAMAGE ASSESSMENT, DOPING, ELECTRON MICROSCOPY, ETCHING, HIGH TEMPERATURE, IONS, MASS SPECTROSCOPY, MOSFET SEMICONDUCTORS, NITRIDES, PLASMAS(PHYSICS), PRODUCTION, REACTIVITIES, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, FIELD EFFECT TRANSISTORS, THIN FILMS, SUBSTRATES

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE