Accession Number : ADA189552

Title :   SiO2 Film Stress Distribution During Thermal Oxidation of Si.

Descriptive Note : Interim technical rept.,

Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s) : Kobeda, E ; Irene, E A

PDF Url : ADA189552

Report Date : 03 Dec 1987

Pagination or Media Count : 22

Abstract : A laser reflection technique is used to investigate the relaxation of Silicon dioxide film stress which occurs during the dry thermal oxidation of Silicon between 700 and 1000 C. Included is a determination of the stress distribution in the oxide by two independent methods: 1) measurement on oxides of various thicknesses from 100 to 800 A, and 2) repeated stress measurements on chemically thinned SiO2 films, viz. etch back analysis toward the interface. Agreement is found between these experiments. These thin film stress measurements are achieved by the use of ultra-thin Si substrates 75 micrometers). Essentially, an increase in film stress with decreasing film thickness is observed. Rapid stress relaxation is observed for all temperatures studied and is attributed to a time-dependent oxide viscosity. The influence of these measured properties on the kinetics of Si oxidation is discussed.

Descriptors :   *OXIDATION, *SILICON, *SILICON DIOXIDE, *STRESS RELAXATION, *THIN FILMS, *STRESS ANALYSIS, DISTRIBUTION, ETCHING, FILMS, KINETICS, LASERS, MEASUREMENT, OXIDES, REFLECTION, STRESSES, TEMPERATURE, THERMOCHEMISTRY, THICKNESS, TIME DEPENDENCE, VISCOSITY

Subject Categories : Ceramics, Refractories and Glass
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE