Accession Number : ADA189763
Title : Gas Source MBE (Molecular Beam Epitaxy).
Descriptive Note : Final rept. 1 Oct 86-10 Sep 87,
Corporate Author : COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Robinson, Gary Y
PDF Url : ADA189763
Report Date : Nov 1987
Pagination or Media Count : 12
Abstract : This report describes the equipment acquired and the research performed under the DoD University Research Instrumentation Program grant for 'Gas Source MBE' at Colorado State University. The objective of the research supported by the grant is to grow epitaxial III-V semiconductor films using gaseous materials for molecular beam epitaxy (MBE). The grant provided the critical equipment items needed to customize the existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other techniques. The resulting gas source MBE materials could provide the optoelectronic device technology required for the high data rate signal processing of the vast quantities of input data expected in future DoD space and ground-based sensing systems. Keywords: Molecular beam epitaxy.
Descriptors : *EPITAXIAL GROWTH, *SEMICONDUCTING FILMS, CRITICAL ASSEMBLIES, DATA RATE, DETECTION, ELECTROOPTICS, GASES, GROUND LEVEL, GROUP III COMPOUNDS, GROUP V COMPOUNDS, GROWTH(GENERAL), HIGH RATE, INPUT, MATERIALS, MOLECULAR BEAMS, QUANTITY, SIGNALS, SOURCES, STRUCTURES, TEST EQUIPMENT
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE