Accession Number : ADA189815
Title : Laser Evaporation Studies.
Descriptive Note : Final rept. 1 Sep 84-31 Aug 87,
Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER
Personal Author(s) : Sankur, H O
PDF Url : ADA189815
Report Date : Oct 1987
Pagination or Media Count : 64
Abstract : The physics of vaporization of matter under pulsed CO2 laser evaporation was studied. Analysis of the nature of the vapor plume in several materials indicated the presence of numerous excited species, neutral as well as ionized species, and ions with high kinetic energies. High quality films of refractory metal oxides and epitaxial films of Ge were deposited. The oxide materials were dense and crystalline and had high refractive index values, even when deposited on room temperature substrates. Ge films were epitaxial and single crystalline when deposited on Si substrates at 300 C. Study of the relationship of deposition conditions and film properties clearly indicated the beneficial role of the energetic ions in the film deposition. Special emphasis was given to the solution of the problem of particulates in the films. Keyword: Germanium, Silicon, Laser deposition.
Descriptors : *EVAPORATION, *LASER APPLICATIONS, *VAPOR DEPOSITION, *THIN FILMS, CRYSTALS, ENERGETIC PROPERTIES, EPITAXIAL GROWTH, FILMS, GERMANIUM, HIGH DENSITY, HIGH ENERGY, IONIZATION, IONS, KINETIC ENERGY, LASERS, MATERIALS, OXIDES, PARTICULATES, PHYSICS, PLUMES, REFRACTIVE INDEX, REFRACTORY MATERIALS, REFRACTORY METALS, ROOM TEMPERATURE, SILICON, SINGLE CRYSTALS, SUBSTRATES, VAPORIZATION, VAPORS, CARBON DIOXIDE LASERS, DIELECTRIC FILMS
Subject Categories : Solid State Physics
Electricity and Magnetism
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE