Accession Number : ADA189979
Title : Beam Assisted Fabrication of III-V/Si Monolithic Devices.
Descriptive Note : Annual rept. 9 Nov 86-9 Oct 87,
Corporate Author : COLORADO STATE UNIV FORT COLLINS
Personal Author(s) : Robinson, Gary Y
PDF Url : ADA189979
Report Date : 10 Sep 1987
Pagination or Media Count : 35
Abstract : The objective of this research project is to explore two new methods for deposition of III-V semiconducting films on Silicon substrates. Using gas-source molecular beam epitaxy (MBE) and photon-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), Gallium Arsenide and other III-V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical characterization the suitability of the resulting III-V/Si structures are being examined for use in monolithic devices.
Descriptors : *SEMICONDUCTING FILMS, *MONOLITHIC STRUCTURES(ELECTRONICS), *VAPOR DEPOSITION, *EPITAXIAL GROWTH, DEPOSITION, FABRICATION, FILMS, GALLIUM ARSENIDES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SILICON, SUBSTRATES, MOLECULAR BEAMS, HETEROJUNCTIONS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE