Accession Number : ADA189979

Title :   Beam Assisted Fabrication of III-V/Si Monolithic Devices.

Descriptive Note : Annual rept. 9 Nov 86-9 Oct 87,

Corporate Author : COLORADO STATE UNIV FORT COLLINS

Personal Author(s) : Robinson, Gary Y

PDF Url : ADA189979

Report Date : 10 Sep 1987

Pagination or Media Count : 35

Abstract : The objective of this research project is to explore two new methods for deposition of III-V semiconducting films on Silicon substrates. Using gas-source molecular beam epitaxy (MBE) and photon-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), Gallium Arsenide and other III-V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical characterization the suitability of the resulting III-V/Si structures are being examined for use in monolithic devices.

Descriptors :   *SEMICONDUCTING FILMS, *MONOLITHIC STRUCTURES(ELECTRONICS), *VAPOR DEPOSITION, *EPITAXIAL GROWTH, DEPOSITION, FABRICATION, FILMS, GALLIUM ARSENIDES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SILICON, SUBSTRATES, MOLECULAR BEAMS, HETEROJUNCTIONS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE