Accession Number : ADA190169
Title : High Density Ion Implanted Contiguous Disk Bubble Technology.
Descriptive Note : Annual scientific rept. no. 1, 30 Sep 86-29 Sep 87,
Corporate Author : CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G
Personal Author(s) : Kryder, M H ; Greve, D W ; Guzman, A ; Jo, S C ; Ramesh, M
PDF Url : ADA190169
Report Date : 31 Oct 1987
Pagination or Media Count : 267
Abstract : During the past year we have advanced the state-of-the-art in several areas of magnetic bubble technology. The main thrust of our research has been to advance ion implanted contiguous disk devices because these devices offer order of magnitude higher bit density than presently manufactured bubble devices. We succeeded in several regards. Noteworthy accomplishments include demonstration of bubble propagation in devices having 4 sq micron bit cells and exhibiting operating margins equal to those of today's manufactured devices. These devices were demonstrated to operate from 0 C to 120 C, the limits of our present testing capabilities. A major factor in this success was our development of new epitaxial garnet materials which exhibited isotropic magnetostrictive properties -- a feature previously not obtained. In addition to the work on bubble propagation we made significant progress on demonstrating a fully operational contiguous disk chip, complete with bubble generators, transfer gates and stretcher/detectors. All components have now been demonstrated to operate with good overlapping margins and a complete chip has been designed and fabricated. We are in the process of testing it.
Descriptors : *BUBBLE MEMORIES, *DETECTORS, *DISKS, *EPITAXIAL GROWTH, *GENERATORS, *IONS, *MAGNETIC FIELDS, *MAGNETOSTRICTION, *PROPAGATION, BUBBLES, CHIPS(ELECTRONICS), DEMONSTRATIONS, GARNET, GATES(CIRCUITS), HIGH DENSITY, ISOTROPISM, STRETCHERS, TRANSFER
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE