Accession Number : ADA190268
Title : High-Efficiency Thin-Film Silicon-on-GaP Solar Cell for Improved Radiation Resistance.
Descriptive Note : Final rept. Jul 86-Feb 87,
Corporate Author : ASTROSYSTEMS INC NEWARK DE ASTRO POWER DIV
Personal Author(s) : Culik, Jerome S
PDF Url : ADA190268
Report Date : Sep 1987
Pagination or Media Count : 28
Abstract : The ultimate high efficiency silicon solar cell is a light trapping thin film silicon structure epitaxially grown on an oxide overcoated substrate such as silicon or gallium phosphide (GaP). In addition to high performance, this thin-base silicon device is more tolerant of radiation effects than a thick-base solar cell because this structure is less sensitive to reductions in minority-carrier diffusion length. The oxide overcoating layer, an integral part of this design, will serve as a dielectric back surface reflector leading to light trapping, and it will also eliminate dangling bonds in the overgrown silicon layer, effectively passivating the silicon-oxide interface and reducing back surface recombination. Keywords: Silicon, Thin film, Heteroepitaxial, Radiation, Gallium phosphide.
Descriptors : *GALLIUM PHOSPHIDES, *RADIATION RESISTANCE, *REFLECTORS, *SILICON, CHARGE CARRIERS, COATINGS, DIELECTRICS, DIFFUSION, LAYERS, OXIDES, RADIATION EFFECTS, REDUCTION, SENSITIVITY, SUBSTRATES, SURFACES, TOLERANCE
Subject Categories : Electric Power Production and Distribution
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE