Accession Number : ADA190913

Title :   Limited Reaction Processing for Semiconductor Device Fabrication.

Descriptive Note : Final rept. 30 Sep 85-30 Nov 87,

Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s) : Gibbons, James F

PDF Url : ADA190913

Report Date : Dec 1987

Pagination or Media Count : 91

Abstract : A new class of semiconductor processing equipment is shown to be feasible. Test equipment has been designed and fabricated which uses a combination of Rapid Thermal and Chemical Vapor Deposition (CVD) technologies to achieve epitaxial growth and deposition of semiconductors and insulators. The trend towards single wafer processing makes Limited Reaction Processing (LRP) particularly relevant to state of the art device fabrication research. Keywords: Rapid thermal processing, Semiconductor devices; Semiconductors; Insulators; Limited reaction processing; Chemical vapor deposition.

Descriptors :   *CHEMICAL REACTIONS, *PROCESSING, *PROCESSING EQUIPMENT, *SEMICONDUCTOR DEVICES, *SEMICONDUCTORS, *VAPOR DEPOSITION, CHEMICALS, DEPOSITION, EPITAXIAL GROWTH, FABRICATION, HEAT, INSULATION, RESPONSE, TEST EQUIPMENT, THERMAL PROPERTIES, WAFERS

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE