Accession Number : ADA191091

Title :   Study for the Determination of General and Specific Properties of Wide Energy-Band Gap HgCdTe in the 1 to 2 Micrometer Wavelength Range.

Descriptive Note : Interim rept. no. 2, Oct-Dec 87,

Corporate Author : SOCIETE ANONYME DE TELECOMMUNICATIONS PARIS (FRANCE)

Personal Author(s) : Nguyen, T ; Durand, A ; Royer, M ; Raymond, F

PDF Url : ADA191091

Report Date : 09 Jan 1988

Pagination or Media Count : 8

Abstract : The second phase of this contract was dedicated to the optimization of the technical fabrication parameters of HgCdTe avalanche photodiodes in the 1.3 micron to 1.55 micron wavelength region. In addition, the electroluminescent properties and the technical feasibility of HgCdTe emitters were investigated. The fabrication technology implemented for the deliverable avalanche photodiodes under this contract is planar.

Descriptors :   *AVALANCHE DIODES, DELIVERY, ELECTROLUMINESCENCE, FABRICATION, FEASIBILITY STUDIES, OPTIMIZATION, FRANCE

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE