Accession Number : ADA191193
Title : Microscopic Control of Semiconductor Interface Reactivity.
Descriptive Note : Interim rept. 1 Aug 86-30 Sep 87,
Corporate Author : MINNESOTA UNIV ST PAUL
Personal Author(s) : Franciosi, A
PDF Url : ADA191193
Report Date : 01 Jan 1988
Pagination or Media Count : 13
Abstract : Executive Summary - The goal of our program is to control semiconductor surface and interface behavior by means of local modifications of the surface/interface chemical environment. Major thrust areas include the use of ultrathin catalyst layer to promote low temperature oxidation and nitridization of semiconductor surfaces, the search for passivating layers to reduce metallization corrosion, and the exploitation of diffusion barrier effects to control interdiffusion at metal-semiconductor junctions. Such studies have potential implications for low temperature synthesis of gate and field oxides, and for enhancing metallization stability against corrosion and electromigration.
Descriptors : *SEMICONDUCTORS, DIFFUSION, CORROSION, OXIDES, METALLIZING, MICROSCOPY, CHEMISTRY, INTERFACES, SYNTHESIS, SURFACE CHEMISTRY, NUCLEATION, SILICON, GALLIUM ARSENIDES, CATALYSTS
Subject Categories : Solid State Physics
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE