Accession Number : ADA191193

Title :   Microscopic Control of Semiconductor Interface Reactivity.

Descriptive Note : Interim rept. 1 Aug 86-30 Sep 87,

Corporate Author : MINNESOTA UNIV ST PAUL

Personal Author(s) : Franciosi, A

PDF Url : ADA191193

Report Date : 01 Jan 1988

Pagination or Media Count : 13

Abstract : Executive Summary - The goal of our program is to control semiconductor surface and interface behavior by means of local modifications of the surface/interface chemical environment. Major thrust areas include the use of ultrathin catalyst layer to promote low temperature oxidation and nitridization of semiconductor surfaces, the search for passivating layers to reduce metallization corrosion, and the exploitation of diffusion barrier effects to control interdiffusion at metal-semiconductor junctions. Such studies have potential implications for low temperature synthesis of gate and field oxides, and for enhancing metallization stability against corrosion and electromigration.

Descriptors :   *SEMICONDUCTORS, DIFFUSION, CORROSION, OXIDES, METALLIZING, MICROSCOPY, CHEMISTRY, INTERFACES, SYNTHESIS, SURFACE CHEMISTRY, NUCLEATION, SILICON, GALLIUM ARSENIDES, CATALYSTS

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE