Accession Number : ADA191423

Title :   MBE of HgCdTe.

Descriptive Note : Interim rept. no. 1,

Corporate Author : CAMBRIDGE UNIV (UNITED KINGDOM) CAVENDISH LAB

Personal Author(s) : Golding, T D

PDF Url : ADA191423

Report Date : Jan 1987

Pagination or Media Count : 5

Abstract : A feasibility study of Indium antimonide/Cadmium telluride superlattices and InSb/CdTe/InSb barrier systems for study of vertical transport properties has been conducted. Auger depth profiles of four-period InSb/CdTe (200/200A) SL grown at 300, 200, and 75 C indicate severe interdiffusion and/or growth problems with this system. CdTe can be successfully grown within the temperature range 180-300 C. InSb is typically grown between 300-400 C. Thus at present the overlap in the InSb and CdTe growth temperature windows is around 300 C. It is also apparent that there is very little incorporation of cadmium. This is believed to be a consequence of the growth mechanism during the growth of an InSb/CdTe SL whereby the Tellurium bonds with In resulting in Cd deficient layers. Once the available indium has bonded with the tellurium stoichiometric CdTe will then prevail. It is apparent that in order to obtain abrupt InSb/CdTe heterojunctions a full study of the parameters during growth will have to be examined.

Descriptors :   *EPITAXIAL GROWTH, *INDIUM ANTIMONIDES, *CADMIUM TELLURIDES, AUGERS, BARRIERS, CADMIUM, DEPTH, DIFFUSION, FEASIBILITY STUDIES, HIGH RATE, INDIUM, INTENSITY, OVERLAP, PROFILES, TELLURIUM, TEMPERATURE, WINDOWS, HETEROJUNCTIONS, CRYSTAL LATTICES, SEMICONDUCTORS

Subject Categories : Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE