Accession Number : ADA191589

Title :   Planar Fully Ion-Implanted High Power InP MISFETs.

Descriptive Note : Professional paper for period ending Aug 87,

Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s) : Messick, L J ; Nguyen, R ; Collins, D A

PDF Url : ADA191589

Report Date : Dec 1987

Pagination or Media Count : 11

Abstract : Planar fully ion-implanted InP power MISFETs using SiO2 as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB gain 800 micron gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our 1 mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.

Descriptors :   *GALLIUM ARSENIDES, *GATES(CIRCUITS), *ION IMPLANTATION, ELECTRICAL INSULATION, HIGH POWER, WIDTH

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE