Accession Number : ADA191589
Title : Planar Fully Ion-Implanted High Power InP MISFETs.
Descriptive Note : Professional paper for period ending Aug 87,
Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
Personal Author(s) : Messick, L J ; Nguyen, R ; Collins, D A
PDF Url : ADA191589
Report Date : Dec 1987
Pagination or Media Count : 11
Abstract : Planar fully ion-implanted InP power MISFETs using SiO2 as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB gain 800 micron gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our 1 mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.
Descriptors : *GALLIUM ARSENIDES, *GATES(CIRCUITS), *ION IMPLANTATION, ELECTRICAL INSULATION, HIGH POWER, WIDTH
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE