Accession Number : ADA191593
Title : Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems.
Descriptive Note : Annual technical rept. 1 Sep 86-31 Aug 87,
Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTE R SCIENCES
Personal Author(s) : Ku, Walter H
PDF Url : ADA191593
Report Date : 31 Aug 1987
Pagination or Media Count : 54
Abstract : This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the computer aided design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.
Descriptors : *COMPUTER AIDED DESIGN, *GATES(CIRCUITS), *INTEGRATED CIRCUITS, *TRANSISTORS, BROADBAND, DISTRIBUTED AMPLIFIERS, ELECTRON MOBILITY, HIGH RATE, LENGTH, MILLIMETER WAVES, MODELS, TWO DIMENSIONAL
Subject Categories : Electrical and Electronic Equipment
Computer Programming and Software
Distribution Statement : APPROVED FOR PUBLIC RELEASE