Accession Number : ADA191618
Title : Defects in High-Mobility Semiconductor Systems.
Descriptive Note : Interim rept. no. 1,
Corporate Author : LUND UNIV (SWEDEN) DEPT OF SOLID STATE PHYSICS
Personal Author(s) : Grimmeiss, Hermann
PDF Url : ADA191618
Report Date : 23 Oct 1987
Pagination or Media Count : 2
Abstract : Initial work under subject contract was devoted to (a) assembling and calibrating essential electrical, optical, and spectroscopic measurement facilities needed for analysis of defects in high-mobility structures; (b) application of such measurement systems to study of basic defects in previously characterized materials, in order to validate techniques and also to verify and extend our understanding of the physics of such basic defects; and (c) initiation of fabrication of critical test samples comprising heterostructures and superlattices of GaAs and Si and Ge.
Descriptors : *ELECTRON MOBILITY, DEFECTS(MATERIALS), FACILITIES, MEASUREMENT, SAMPLING, SPECTROSCOPY, STRUCTURES, CRYSTAL DEFECTS, SOLID STATE PHYSICS, GALLIUM ARSENIDES, SILICON, GERMANIUM
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE