Accession Number : ADA191752
Title : Recent Data on Si:As Impurity Band Conduction Multiplexed Arrays.
Descriptive Note : Rept. for period ending Mar 87,
Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
Personal Author(s) : Merriam, J. D. ; Bentley, R. K.
Report Date : NOV 1987
Pagination or Media Count : 6
Abstract : Data is presented from recent measurements of two Si:As impurity band conduction multiplexed arrays. The devices were produced by different manufacturers. The devices were measured at a temperature of 12 K, and at a background of 1.5x10 to the 12th power Photons/sec. sq cm. Both devices show high responsivity and excellent uniformity. The development of impurity band conduction detectors offers the opportunity for high responsivity, uniform, multiplexed arrays for imaging applications. This paper presents data from recent measurements on two Si:As impurity band conduction multiplexed arrays. The arrays were manufactured by Hughes Aircraft Company and Rockwell International. Both arrays were operated at a background photon flux density of 1.5x10 to the 12th power Photons/sec. sq cm. and at a temperature of 12 K. The spectral response curves of the two devices are presented. Both devices exhibit a spectral peak near 24 micrometers. Note the extended long wavelength response of these two detectors. This long wavelength response is bias voltage dependent, the response extending the longer wavelengths at higher bias voltages. These spectral data were obtained at a bias of 1.5 volts.
Descriptors : *CONDUCTIVITY, *DETECTORS, AIRCRAFT INDUSTRY, BACKGROUND, BIAS, CURVES(GEOMETRY), FLUX DENSITY, FREQUENCY, IMAGES, LONG WAVELENGTHS, PHOTONS, RESPONSE, SPECTRA, SPECTRAL LINES, VOLTAGE.
Subject Categories : Solid State Physics
Target Direction, Range and Position Finding
Distribution Statement : APPROVED FOR PUBLIC RELEASE