Accession Number : ADA191808
Title : Studies of Metal-Silicon, Silicon-Metal, and Silicide Based Interfaces: Synchrotron Radiation Photoemission and Inverse Photoemission Investigations of Interface Formation and Compound Nucleation.
Descriptive Note : Final rept. 1 Oct 84-23 Oct 87,
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
Personal Author(s) : Weaver, John H
PDF Url : ADA191808
Report Date : 15 Jan 1988
Pagination or Media Count : 30
Abstract : This report summarizes a three-year investigation of metal/semiconductor interface formation. Highlights for the 21 refereed papers are included, together with copies of feature articles published in Physics Today and The American Scientist which cite support from ARO. Keywords: Metal/Semiconductor; Interfaces; Synchrotron radiation photoemission; Inverse photoemission; Compound nucleation.
Descriptors : *METALS, *PHOTOELECTRIC EMISSION, *SILICIDES, *SILICON, INTERFACES, INVERSION, NUCLEATION, PHYSICS, RADIATION, SCIENTISTS, SEMICONDUCTORS, SYNCHROTRONS
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE