Accession Number : ADA191902

Title :   Fabrication of Polysilicon Gate FET in Laser Melted Silicon on Silicon Dioxide on PLZT,

Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s) : Burgener, M L ; Lin, T H

PDF Url : ADA191902

Report Date : Mar 1987

Pagination or Media Count : 2

Abstract : N-channel Polysilicon gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on PLZT structure. Channel mobilities in the devices are 50 sq. cm/Vs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect. Keywords: Polysilicon gate, Field effect transistors, Ferroelectric materials.

Descriptors :   *FERROELECTRIC MATERIALS, *GATES(CIRCUITS), *N TYPE SEMICONDUCTORS, *POLYSILICONS, CHANNELS, DIELECTRICS, DOPING, ELECTROOPTICS, FIELD EFFECT TRANSISTORS, LASERS, MOBILITY, PROCESSING, SILICON DIOXIDE, TEMPERATURE, THICKNESS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE