Accession Number : ADA192114
Title : Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators.
Descriptive Note : Final rept. 1980-1983,
Corporate Author : HARRY DIAMOND LABS ADELPHI MD
Personal Author(s) : Boesch, Harold E , Jr
PDF Url : ADA192114
Report Date : Mar 1988
Pagination or Media Count : 59
Abstract : Results are presented of an effort to develop an all-electrical means for simulating the effects of ionizing radiation on the radiation-sensitive oxide layers of metal-oxide-semiconductor (MOS) microelectronic devices. The report describes the field-induced electron injection and impact ionization (F4l) technique, its successful demonstration, and successful correlation of F4l test results with conventional radiation hardness tests using an ionizing radiation source (60Co). Also described are the development and operation of a microcomputer-controlled test system that permits semiautomatic application of the F4l test to circuit test structures. Keywords: Hardness assurance, Fowler Nordheim tunneling, Impact ionization, Hole trapping, Interface traps, Radiation effects.
Descriptors : *CIRCUIT TESTERS, *GATES(CIRCUITS), *HOLES(ELECTRON DEFICIENCIES), *IONIZING RADIATION, *RADIATION HARDENING, CONTROL SYSTEMS, ELECTRONS, HARDNESS, IMPACT, INJECTION, INSULATION, INTERFACES, IONIZATION, MICROCOMPUTERS, MICROELECTRONICS, RADIATION, RADIATION EFFECTS, SEMIAUTOMATIC, SOURCES, SUBMINIATURE ELECTRONIC EQUIPMENT, TEST METHODS, TRAPPING(CHARGED PARTICLES), TRAPS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE