Accession Number : ADA192114

Title :   Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators.

Descriptive Note : Final rept. 1980-1983,

Corporate Author : HARRY DIAMOND LABS ADELPHI MD

Personal Author(s) : Boesch, Harold E , Jr

PDF Url : ADA192114

Report Date : Mar 1988

Pagination or Media Count : 59

Abstract : Results are presented of an effort to develop an all-electrical means for simulating the effects of ionizing radiation on the radiation-sensitive oxide layers of metal-oxide-semiconductor (MOS) microelectronic devices. The report describes the field-induced electron injection and impact ionization (F4l) technique, its successful demonstration, and successful correlation of F4l test results with conventional radiation hardness tests using an ionizing radiation source (60Co). Also described are the development and operation of a microcomputer-controlled test system that permits semiautomatic application of the F4l test to circuit test structures. Keywords: Hardness assurance, Fowler Nordheim tunneling, Impact ionization, Hole trapping, Interface traps, Radiation effects.

Descriptors :   *CIRCUIT TESTERS, *GATES(CIRCUITS), *HOLES(ELECTRON DEFICIENCIES), *IONIZING RADIATION, *RADIATION HARDENING, CONTROL SYSTEMS, ELECTRONS, HARDNESS, IMPACT, INJECTION, INSULATION, INTERFACES, IONIZATION, MICROCOMPUTERS, MICROELECTRONICS, RADIATION, RADIATION EFFECTS, SEMIAUTOMATIC, SOURCES, SUBMINIATURE ELECTRONIC EQUIPMENT, TEST METHODS, TRAPPING(CHARGED PARTICLES), TRAPS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Electromagnetic Shielding

Distribution Statement : APPROVED FOR PUBLIC RELEASE