Accession Number : ADA192269
Title : Integrated Optoelectronic Circuits Utilizing InGaAsP Grown by Molecular Beam Epitaxy (Erbium Doping of MBE GaAs).
Descriptive Note : Final rept. 1 Apr 85-31 Dec 86,
Corporate Author : GEORGIA TECH RESEARCH INST ATLANTA
Personal Author(s) : Meeks, E L
PDF Url : ADA192269
Report Date : Jan 1987
Pagination or Media Count : 19
Abstract : A study of erbium doping of molecular beam epitaxy(MBE) grown gallium arsenide layers was initiated. In the present work, the low temperature photoluminescence of Er in GaAs was confirmed and the growth conditions necessary to produce Er doped layers were established. Secondary ion mass spectrometry (SIMS) data on the MBE grown GaAs:Er doped layers confirm the presence of Er in the layers and the increase in Er doping with source temperature. Photoluminescence measurements on three samples of MBE grown GaAs: Er layers were very interesting. There is no evidence of any broad background which is observed in ion-implanted samples. The intense and sharply structured photoluminescence of MBE grown Er doped GaAs centered around 1.54 microns has been confirmed.
Descriptors : *ELECTROOPTICS, *GALLIUM ARSENIDES, *INTEGRATED CIRCUITS, *OPTICAL CIRCUITS, DOPING, ENVIRONMENTS, EPITAXIAL GROWTH, ERBIUM, GROWTH(GENERAL), ION IMPLANTATION, LAYERS, LOW TEMPERATURE, MASS SPECTROMETRY, MEASUREMENT, MOLECULAR BEAMS, PHOTOLUMINESCENCE, SAMPLING, SOURCES, TEMPERATURE, INDIUM PHOSPHIDES
Subject Categories : Electrooptical and Optoelectronic Devices
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE