Accession Number : ADA192298
Title : Defects in High-Mobility Semiconductor Systems.
Descriptive Note : Interim rept. no. 2,
Corporate Author : LUND UNIV (SWEDEN) DEPT OF SOLID STATE PHYSICS
Personal Author(s) : Grimmeiss, Hermann
PDF Url : ADA192298
Report Date : 23 Dec 1987
Pagination or Media Count : 3
Abstract : Work under subject contract was continued in the period 23 Oct thru 23 Dec 1987 on (a) extensive electrical examination of the Pb center on silicon surfaces; (b) preliminary electrical investigation of the new metastable gallium arsenide (GaAs) defect which competes with the EL-2 center; (c) initial EPR measurements on a high ceramic superconductor; (d) related conceptual studies and tests. (a) The photocapacitance system described in the First Interim Report was applied to an extensive study of the Pb center on oxidized silicon (SI) surfaces. This center is the most important defect in integrated circuit technology, and serves as an ideal reference for study of other less-well characterized defects.
Descriptors : *SILICON, CAPACITANCE, CERAMIC MATERIALS, ELECTRICAL PROPERTIES, GALLIUM ARSENIDES, INTEGRATED CIRCUITS, METASTABLE STATE, OXIDATION, PHOTOELECTRICITY, SUPERCONDUCTORS, SURFACES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE