Accession Number : ADA192306

Title :   NDP (Neutron Depth Profiling) Evaluations of Boron-Implanted Compound Semiconductors,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS

Personal Author(s) : Bowman, Robert C , Jr ; Knudsen, John F ; Downing, R G

PDF Url : ADA192306

Report Date : 04 Mar 1988

Pagination or Media Count : 93

Abstract : This report describes recent neutron depth profiling (NDP) experiments on the distribution of implanted boron in several semiconductors. The objectives are to compare the boron profiles for different materials that had been simultaneously implanted and to assess the effects of annealing treatments that were used to remove implant damage and electrically activate the boron. Keywords: Ion implants, Compound semiconductors, Neutron depth profiling.

Descriptors :   *BORON, *IMPLANTATION, *SEMICONDUCTORS, ANNEALING, DAMAGE, DEPTH, IONS, NEUTRONS, PROFILES

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE