Accession Number : ADA192307

Title :   Atomic Layer Epitaxy of ZnS and ZnSe

Descriptive Note : Final rept. 8 May 86-18 Jun 87,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s) : Nelson, J G

PDF Url : ADA192307

Report Date : Feb 1988

Pagination or Media Count : 40

Abstract : The objective of this program was to determine the feasibility of using Atomic Layer Epitaxy (ALE) as a deposition technique for fabricating IR rugate structures. Theoretical activities under the contract consisted of designing and modeling rugate structures containing ZnS and ZnSe or ZnSe and ZnTe. The experimental work resulted in the growth of high-quality epitaxial films of ZnS, ZnSe and ZnTe on (001)-oriented GaAs substrates. Multi-layer structures (quarter-wave stacks and rugate filters) of ZnSe and ZnTe were deposited, but although certain aspects of these ALE structures were successful, the devices did not show the optical performance that was expected. This has been understood as resulting from differences in film nucleation and growth rates between the two candidate materials which were chosen for this program. Our conclusions are that, although ALE is capable of producing high-quality epitaxial and chalcogenide thin films, it is not a practical technique for fabricating IR rugate filters.

Descriptors :   *ZINC SULFIDES, *ZINC SELENIDES, DEPOSITION, FILMS, GALLIUM ARSENIDES, GROWTH(GENERAL), LAYERS, NUCLEATION, OPTICAL PROPERTIES, RATES, STRUCTURES, SUBSTRATES

Subject Categories : Inorganic Chemistry
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE