Accession Number : ADA192322
Title : Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor.
Descriptive Note : Technical rept.,
Corporate Author : UTAH UNIV SALT LAKE CITY DEPT OF CHEMISTRY
Personal Author(s) : Pons, Stanley ; Cassidy, John ; Janata, Jiri
PDF Url : ADA192322
Report Date : 30 Jul 1986
Pagination or Media Count : 45
Abstract : A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemically deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions particularly on the presence of oxygen. If the device is tested in air the dynamic range spans logarithmically five decades of partial pressure of hydrogen.
Descriptors : *GATES(CIRCUITS), DETECTORS, HYDROGEN, LAYERS, OXYGEN, PARTIAL PRESSURE, RESPONSE, SURFACES, TIME
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE