Accession Number : ADA192322

Title :   Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor.

Descriptive Note : Technical rept.,

Corporate Author : UTAH UNIV SALT LAKE CITY DEPT OF CHEMISTRY

Personal Author(s) : Pons, Stanley ; Cassidy, John ; Janata, Jiri

PDF Url : ADA192322

Report Date : 30 Jul 1986

Pagination or Media Count : 45

Abstract : A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemically deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions particularly on the presence of oxygen. If the device is tested in air the dynamic range spans logarithmically five decades of partial pressure of hydrogen.

Descriptors :   *GATES(CIRCUITS), DETECTORS, HYDROGEN, LAYERS, OXYGEN, PARTIAL PRESSURE, RESPONSE, SURFACES, TIME

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE