Accession Number : ADA192384

Title :   Picosecond Optoelectronic Sampling of Electrical Waveforms Produced by an Optically Excited Field Effect Transistor.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s) : Moss, Steven C.

Report Date : 30 DEC 1987

Pagination or Media Count : 8

Abstract : Picosecond optoelectronic techniques were used to measure the electrical response of a submicron gate GaAs FET to optical excitation by picosecond laser pulses. Results indicated that carrier transport in these devices is strongly affected by screening of the applied electrical bias at high optical excitation levels. The use of these devices as ultrafast photodetectors and as generators of ultrafast transient electrical waveforms on GaAs integrated circuits was discussed.

Descriptors :   *FIELD EFFECT TRANSISTORS, BIAS, CHARGE CARRIERS, ELECTRICAL PROPERTIES, ELECTRICITY, ELECTROOPTICS, EXCITATION, GALLIUM ARSENIDES, GATES(CIRCUITS), HIGH RATE, INTEGRATED CIRCUITS, LIGHT PULSES, OPTICS, PHOTODETECTORS, RESPONSE, SAMPLING, TRANSIENTS, TRANSPORT PROPERTIES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE