Accession Number : ADA192394

Title :   Near Ultraviolet-Visible-Near Infrared Optical Behavior of Sputter Deposited GeO(x) (1.85 = x = 2.30),

Corporate Author : WISCONSIN UNIV-MILWAUKEE

Personal Author(s) : Aita, Carolyn R ; Marhic, Michel E ; Sayers, Curt N

PDF Url : ADA192394

Report Date : Jun 1987

Pagination or Media Count : 7

Abstract : This paper describes the reactive sputter deposition and optical characterization of GeOx where x lies between 1.85 and 2.30. The films were grown by sputtering a Ge target in 02-bearing atmospheres containing 0 to 80% Ar. Films deposited in 0 to 60% Ar were nominally germania. However, transmission in the UV-visible, the strength of the 245nm defect center, the optical absorption coefficient, and the optical energy band gap were strongly influenced by the presence of Ar in the discharge. Films deposited in gas containing 80% Ar were substoichiometric germania.

Descriptors :   *OPTICAL PROPERTIES, *GERMANATES, *SEMICONDUCTING FILMS, ABSORPTION COEFFICIENTS, DEPOSITION, ENERGY BANDS, ENERGY GAPS, REACTIVITIES, SPUTTERING, OXYGEN, GERMANIUM, ABSORPTION SPECTRA, ULTRAVIOLET SPECTRA

Subject Categories : Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE