Accession Number : ADA192700
Title : A Planar IC-Compatible Transferred Electron Device for Millimeter-Wave Operation.
Descriptive Note : Interim rept. no. 1, Sep-Oct 86,
Corporate Author : JOHANNES KEPLER UNIV LINZ (AUSTRIA) MICROELECTRONICS INST
Personal Author(s) : Thim, Hartwig W
PDF Url : ADA192700
Report Date : 31 Oct 1986
Pagination or Media Count : 5
Abstract : During the first period of the contract a computer program has been adapted for use on an HP 9836CS desk computer. The device fabrication processes are presently being developed in order to improve yield. Reactive ion etching has been found to be of key importance for fabricating the overlapping gate cathode contact which is the key feature of the FECTED. Standard microstrip circuits have been designed and fabricated for testing the devices at Ka-band (26-40GHz). Keywords: Computer simulation; Field effect control; Transferred electron devices; Device fabrication; Reactive ion etching; Microstrip circuits.
Descriptors : *FABRICATION, *GATES(CIRCUITS), *STRIP TRANSMISSION LINES, CATHODES, COMPUTER PROGRAMS, COMPUTERIZED SIMULATION, CONTROL, ELECTRON TRANSFER, ELECTRONIC EQUIPMENT, ETCHING, ION BEAMS, KA BAND, MILLIMETER WAVES, REACTIVITIES, AUSTRIA, FIELD EFFECT TRANSISTORS
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE