Accession Number : ADA192702
Title : A Planar IC-Compatible Transferred Electron Device for Millimeter-Wave Operation.
Descriptive Note : Interim rept. no. 3, 1 Mar-31 Aug 87,
Corporate Author : JOHANNES KEPLER UNIV LINZ (AUSTRIA) MICROELECTRONICS INST
Personal Author(s) : Thim, Hartwig W
PDF Url : ADA192702
Report Date : 31 Aug 1987
Pagination or Media Count : 7
Abstract : Computer simulations have revealed that FEDTEDs operate with high efficiencies of approx. 9% at lower doping levels 5 times 10 to the 15th power/cc but in a very narrow range of RF/DC voltage levels. Lower efficiencies (3%-6%) are obtainable with doping levels of 2 to 3 times 10 to the 16th power/cc in a much broader range of RF/DC voltages. Experimental results obtained with a new batch of devices made from epitaxially grown layers with N sub D 2.5 times 10 to the 16th power/cc and d=0.9 micrometers are now very encouraging as, for the first time, broad band gain of several db from 26 - 30 GHz and, when loaded with a dielectric resonator output power levels of 10mw with 1.2% efficiency at 29.7 GHz have been obtained. Both, improved device technology and optimized stripline circuitry are made responsible for the improved performance. Future work will concentrate on pushing efficiencies up by a factor of 5 and on optimizing circuitry for 35 GHz operation. Keywords: Field effect controlled transferred electron devices.
Descriptors : *STRIP TRANSMISSION LINES, *INTEGRATED CIRCUITS, *FIELD EFFECT TRANSISTORS, BATCH PROCESSING, BROADBAND, CIRCUITS, COMPUTERIZED SIMULATION, DIRECT CURRENT, DOPING, EFFICIENCY, GAIN, LAYERS, LEVEL(QUANTITY), MILLIMETER WAVES, OPERATION, OPTIMIZATION, RADIOFREQUENCY, VOLTAGE, EPITAXIAL GROWTH, AUSTRIA, FABRICATION
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE