Accession Number : ADA192914
Title : Preparation and Characterization of SnS2.
Descriptive Note : Technical rept.,
Corporate Author : BROWN UNIV PROVIDENCE RI DEPT OF CHEMISTRY
Personal Author(s) : Kourtakis, K ; DiCarlo, J ; Kershaw, R ; Dwight, K ; Wold, A
PDF Url : ADA192914
Report Date : 15 Mar 1988
Pagination or Media Count : 21
Abstract : Single crystals of stannous sulfide(SnS2) crystallizing with the hexagonal cadmium iodide(CdI2) structure, have been grown by vapor transport and chemical vapor transport. Electronic, optical and infrared properties have been studied, as well as thermal stability in flowing oxygen. The impact on the electrical properties of slight deviations from stoichiometry and halogen impurity were investigated. Crystals free of halogen impurity can be grown by vapor transport. The sign of the majority carriers of crystals grown by vapor transport is dependent upon the growth conditions. If higher growth temperatures are used (750-700 C), vapor grown crystals are n-type semiconductors and exhibit low resistivities. Annealing of vapor grown crystals in sulfur at 600 C increases the resistivity. When the charge-growth temperatures are lowered to 650-600 C and 5% excess sulfur is included in the charge, the crystals are p-type semiconductors with high resistivities.
Descriptors : *SULFIDES, *TIN COMPOUNDS, ANNEALING, CHEMICAL PROPERTIES, CRYSTALS, ELECTRICAL PROPERTIES, ELECTRICAL RESISTANCE, ENVIRONMENTS, GROWTH(GENERAL), HALOGENS, HIGH TEMPERATURE, IMPURITIES, INFRARED RADIATION, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, RESISTANCE, SEMICONDUCTORS, SINGLE CRYSTALS, STOICHIOMETRY, THERMAL STABILITY, TRANSPORT, TRANSPORT PROPERTIES, VAPORS
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE