Accession Number : ADA193098
Title : Focused Ion Beam Fabrication of Graded Channel Fet's in GaAs and Si.
Descriptive Note : Semi-Annual rept. 1 Jul-31 Dec 87,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
Personal Author(s) : Melngailis, John
PDF Url : ADA193098
Report Date : 03 Feb 1988
Pagination or Media Count : 8
Abstract : The goal of this research is to exploit the novel capability of the focused ion beam to implant dopants whose density is a function of the lateral position. Thus, Field Effect Transistors in Gallium Arsenide and Silicon can be fabricated with a gradient of doping from source to drain. We have fabricated and tested such graded FET's in GaAs and have fabricated Si devices up to the point of focused ion beam implantation. In addition, programs for modeling the devices on the computer have been written. Recently, we have conceived and fabricated a new device: a tunable Gunn oscillator which makes use of doping gradients. To carry out these implantations, we have further developed the performance of our focused ion beam machine.
Descriptors : *GALLIUM ARSENIDES, *ION BEAMS, *SILICON, CHANNELS, COMPUTERS, DOPING, DRAINAGE, FABRICATION, FIELD EFFECT TRANSISTORS, FOCUSING, GRADIENTS, GUNN DIODES, ION IMPLANTATION, OSCILLATORS, SOURCES, TUNING
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE