Accession Number : ADA193176

Title :   Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface.

Descriptive Note : Interim technical rept.,

Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s) : Irene, E A

PDF Url : ADA193176

Report Date : 25 Mar 1988

Pagination or Media Count : 16

Abstract : The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.

Descriptors :   *OXIDATION, *SILICON, *SILICON DIOXIDE, *THIN FILMS, AVAILABILITY, CRYSTALS, ELECTRONS, FILMS, IMPURITIES, ORIENTATION(DIRECTION), PHYSICS, SINGLE CRYSTALS, STRESSES, SUBSTRATES, THERMOCHEMISTRY, THINNESS

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE