Accession Number : ADA193242

Title :   Picosecond Transient Reflectivity of Unpinned Gallium Arsenide (100) Surfaces.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s) : Beck, Steven M ; Wessel, John E

PDF Url : ADA193242

Report Date : 01 Feb 1988

Pagination or Media Count : 18

Abstract : Surface recombination was measured for photowashed and unwashed gallium arsenide using picosecond transient photoreflectance methods. The results for the washed surfaces clearly demonstrate slow surface recombination that is accurately described by an ambipolar diffusion model. The fast decay observed for unwashed samples implies rapid surface recombination involving a more complex mechanism. Keywords: Fermi level pinning, Pinned surfaces, Doping, Dye lasers.

Descriptors :   *FERMI SURFACES, *GALLIUM ARSENIDES, *SEMICONDUCTORS, DOPING, DYE LASERS, REFLECTIVITY, TRANSIENTS, CRYSTAL LATTICES, PHOTOLUMINESCENCE, DOPING

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE