Accession Number : ADA193380
Title : Studying the Physics and Operation of Multi-Terminal Near-Micron and Sub-Micron Length, Hot Electron Semiconductor Devices.
Descriptive Note : Final rept. Jun 81-May 86,
Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Personal Author(s) : Grubin, H L ; Kreskovsky, J P ; Meyyappan, M ; Morrison, B J
PDF Url : ADA193380
Report Date : 15 Feb 1988
Pagination or Media Count : 494
Abstract : The study encompasses a broad examination of transport in submicron and near-micron semiconductor devices through implementation of the moments of the Boltzmann transport equation and the semiconductor drift and diffusion equation. The study utilized advanced algorithms developed at Scientific Research Associates, and recommends development of a network of user based algorithms for closely combined theoretical/experimental interactions. Keywords: Boltzmann transport, Transients, Overshoot, Gallium arsenides, Silicon.
Descriptors : *BOLTZMANN EQUATION, *TRANSPORT PROPERTIES, *ELECTRON ENERGY, ALGORITHMS, DIFFUSION, DRIFT, EQUATIONS, GALLIUM ARSENIDES, INTERACTIONS, LENGTH, MOMENTS, SEMICONDUCTOR DEVICES, SEMICONDUCTORS, SILICON, USER NEEDS, HIGH ENERGY, MONTE CARLO METHOD, INDIUM PHOSPHIDES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE