Accession Number : ADA193497
Title : Low Temperature Film Growth of the Oxides of Zinc, Aluminum, and Vanadium (and Related Systems, Oxides of Gold and Germanium, Nitrides of Aluminum and Tungsten) by Reactive Sputter Deposition.
Descriptive Note : Final rept. 1 Jul 84-31 Dec 87,
Corporate Author : WISCONSIN UNIV MILWAUKEE LAB OF SURFACE STUDIES
Personal Author(s) : Aita, Carolyn R
PDF Url : ADA193497
Report Date : Feb 1988
Pagination or Media Count : 140
Abstract : The research involved investigation of process parameter growth environment film property relationships for various binary oxide and nitride films grown on unheated substrates by reactive sputter deposition using an elemental target. In situ optical emission spectroscopy and glow discharge mass spectrometry were used to determine gas phase species in the plasma volume. A battery of techniques were used to characterize (post-deposition) film crystallography, chemistry, microstructure, electrical resistivity, and optical behavior. Keywords: Sputter deposition, Glow discharges, Glow discharge diagnostics, Optical emission, Mass spectrometry, Aluminum oxide, Vanadium, Pentoxide, Gold oxide, Tungsten nitride, Aluminum nitride, Germanium dioxide.
Descriptors : *FILMS, *NITRIDES, *OXIDES, *SPUTTERING, *METAL COMPOUNDS, *PHASE TRANSFORMATIONS, ALUMINUM COMPOUNDS, ALUMINUM OXIDES, CRYSTALLOGRAPHY, DEPOSITION, DIAGNOSIS(GENERAL), DIOXIDES, ELECTRICAL RESISTANCE, EMISSION, EMISSION SPECTROSCOPY, GERMANIUM, GLOW DISCHARGES, GOLD, GROWTH(GENERAL), LOW TEMPERATURE, MASS SPECTROMETRY, MICROSTRUCTURE, OPTICAL PROPERTIES, SUBSTRATES, TUNGSTEN, VANADIUM, VAPOR PHASES, VAPOR DEPOSITION, PLASMAS(PHYSICS), SURFACE CHEMISTRY
Subject Categories : Physical Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE