Accession Number : ADA194036

Title :   The VPE-Hydride Technique with Alloy Source; Equilibrium Analysis.

Descriptive Note : Rept. for 8 Mar-15 Jul 87,

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s) : Quinlan, Kenneth P

PDF Url : ADA194036

Report Date : Nov 1987

Pagination or Media Count : 26

Abstract : An equilibrium analysis of the Vapor Phase Epitaxy(VPE)-hydride technique using an alloy source has been completed with the analysis method of Quinlan. Results of the analysis are in close agreement with the experimental findings of other investigators. The compositions of the InxGa(1-x)As are dependent on the alloy compositions, and the initial partial pressures of hydrogen chloride and arsenic. The indium content of the ternaries increases with increasing arsenic pressures below .001 atm and remains constant above this value. The analysis indicates that the lattice matched In(0.53)Ga(0.47)As can continually be prepared from the same alloy by changing the initial partial pressures of hydrogen chloride. Keywords: III-V Semiconductors; Indium compounds; Gallium arsenides.

Descriptors :   *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, *INDIUM COMPOUNDS, *SEMICONDUCTORS, ALLOYS, COMPOSITION(PROPERTY), EQUILIBRIUM(GENERAL), GALLIUM ARSENIDES, HYDROGEN CHLORIDE, PARTIAL PRESSURE, SOURCES

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE