Accession Number : ADA194254

Title :   Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films.

Descriptive Note : Annual rept. Aug 87-May 88,

Corporate Author : SOUTHERN METHODIST UNIV DALLAS TEX DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Chu, Shirley S ; Chu, Ting L

PDF Url : ADA194254

Report Date : 23 May 1988

Pagination or Media Count : 30

Abstract : The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Efforts during the past year has been focused to the homo- and heteroepitaxial growth and characterization of gallium arsenide (GaAs) films on GaAs and silicon (Si) substrates by laser-induced metalorganic chemical vapor deposition (LIMOCVD). ArF excimer laser (193 nm) was used before the free electron laser is available. The reaction between trimethylgallium and arsine in hydrogen under reduced pressure was used for the epitaxial growth of GaAs. Homoepitaxial GaAs films deposited by LIMOCVD at 425 - 500 C are similar to conventional homoepitaxial GaAs films (at 700 C) in properties. Heteroepitaxial GaAs films on Si substrates of (100) orientation have been deposited at 500 C by LIMOCVD with emphasis on the cleanliness of the substrate surface. Transmission electron microscopy and Raman spectra indicated that the heteroepitaxial GaAs films are presumably of a (111) orientation and that their crystalline perfection is superior to those deposited by other techniques. Keywords: Epitaxial growth; Chemical vapor deposition; Excimer; Homoepitaxial growth; Heteroepitaxial growth; Dislocation; Doping concentration.

Descriptors :   *EPITAXIAL GROWTH, *FILMS, *GALLIUM ARSENIDES, ARSINES, CHEMICAL REACTIONS, CONCENTRATION(CHEMISTRY), DOPING, ELECTRON MICROSCOPY, EXCIMERS, FREE ELECTRON LASERS, GROUP III COMPOUNDS, GROUP V COMPOUNDS, GROWTH(GENERAL), HYDROGEN, LASERS, LOW TEMPERATURE, PRESSURE, QUALITY, RAMAN SPECTRA, REDUCTION, SEMICONDUCTING FILMS, SILICON, SUBSTRATES, SURFACES, TRANSMITTANCE, VAPOR DEPOSITION

Subject Categories : Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE