Accession Number : ADA194258
Title : A Study of Electronic Transport and Breakdown in SiO2.
Descriptive Note : Final rept.,
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH
Personal Author(s) : Ferry, D K
PDF Url : ADA194258
Report Date : 01 Mar 1988
Pagination or Media Count : 11
Abstract : Transport of electrons in silicon dioxide, at high electric fields, has been of much interest for quite some time. In spite of this, the role of various scattering processes has not yet been sorted out. At low fields, electrons show a mobility in the 20-30 sq. cm/V-sec range, and at high fields (of the order of 1 MV/cm) begin to exhibit hot carrier effects. The polar modes are the dominant electron scatterers for fields up to 1.5-2 MV/cm, and beyond this, runaway begins to occur. Experimentally, it is found that the electron distribution function stabilizes at an average energy around 3 eV for fields above 3 MV/cm, which requires the onset of additional scattering processes. The current understanding of the transport and scattering processes is reviewed. In particular, the role of Umklapp processes, and intervalley processes, is discussed. Calculations utilizing an ensemble Monte Carlo technique are used to study the various processes.
Descriptors : *DISTRIBUTION FUNCTIONS, *SILICON DIOXIDE, *ELECTRON TRANSPORT, ELECTRONS, CHARGE CARRIERS, HIGH ENERGY, POLAR REGIONS, TRANSPORT, SCATTERING, ELECTRIC FIELDS, MONTE CARLO METHOD, SCATTERING
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE