Accession Number : ADA194305

Title :   Reaction Dynamics on Semiconductor Surfaces.

Descriptive Note : Final rept. 1 Mar 86-28 Feb 88,

Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY DEPT OF MATERIALS ENGINEERING

Personal Author(s) : Hudson, John B

PDF Url : ADA194305

Report Date : 28 Feb 1988

Pagination or Media Count : 7

Abstract : The combined techniques of molecular beam relaxation spectroscopy and Auger electron spectroscopy have been used to study the reactions of H2 and O2 on clean iron surfaces and of Kr, H2 and O2 on clean silicon and germanium surfaces. Results include adsorption and permeation of H in iron, H2O formation on iron, oxidation of iron, volatilization of silicon and germanium in oxygen, krypton physisorption on germanium and H adsorption on silicon. Keywords: Hydrogen, Water surfaces, Chemistry, Kinetics, Molecular beam scattering, Adsorption, Semiconductors, Metals.

Descriptors :   *SEMICONDUCTORS, *SURFACES, ADSORPTION, AUGER ELECTRON SPECTROSCOPY, BEAMS(RADIATION), CHEMISTRY, DYNAMICS, GERMANIUM, HYDROGEN, IRON, METALS, MOLECULAR BEAMS, MOLECULAR PROPERTIES, MOLECULAR SPECTROSCOPY, OXIDATION, OXYGEN, RELAXATION, RESPONSE, SCATTERING, SILICON, VOLATILITY, WATER

Subject Categories : Physical Chemistry
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE