Accession Number : ADA194526

Title :   Computer Simulation of Electromigration in Thin Films.

Descriptive Note : Final technical rept. Jun-Aug 86,

Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY DEPT OF PHYSICS

Personal Author(s) : Huntington, H B

PDF Url : ADA194526

Report Date : Nov 1987

Pagination or Media Count : 17

Abstract : This report summarizes progress made toward computer simulation of the electromigration process in thin films. In particular it addresses the issues of forming a meaningful film, accounting for variations in the grain boundary energy and lattice mismatch, stress relaxations or annealing of the film, and mass flux within the film with and without a constraining overlayer. It incorporates vacancy concentration depended flux, but does not include the effects of void coalescence on the current density or temperature, and thus is an early life description. (Author)

Descriptors :   *ANNEALING, *COMPUTERIZED SIMULATION, *GRAIN BOUNDARIES, *IONIC CURRENT, *THIN FILMS, COALESCENCE, CURRENT DENSITY, ENERGY, FILMS, FLUX(RATE), ISOTOPE SEPARATION, MASS FLOW, RELAXATION, STRESSES

Subject Categories : Crystallography
      Computer Programming and Software

Distribution Statement : APPROVED FOR PUBLIC RELEASE