Accession Number : ADA194643

Title :   Silicon, Oxygen Free.

Descriptive Note : Interim rept.,

Corporate Author : AREA THERM CORP LORTON VA

Personal Author(s) : Allard, Edward F

PDF Url : ADA194643

Report Date : Nov 1986

Pagination or Media Count : 12

Abstract : The absorption in Silicon for the 8 micron to 12 micron region depends on the amount of oxygen contamination in the sample and on the intrinsic or lattice vibrations of the sample. The oxygen contamination component can be eliminated if the total number of oxygen atoms/cc does not exceed 2 x 10 to the 17th power. As a starting point specification for optical silicon, the silicon should have no more than 2 x 10 to the 17th power oxygen atoms per cc. There is some evidence that controlled amounts of Germanium added to the silicon reduces the intrinsic absorption at 9 microns. Si may be substituted for germanium for thin lens applications. Si doped with Ge may be a suitable substitute for Ge for many applications.

Descriptors :   *OXYGEN, *SILICON, ABSORPTION, ATOMS, CONTAMINATION, GERMANIUM, LENSES, OPTICAL PROPERTIES, SPECIFICATIONS, THINNESS

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE