Accession Number : ADA194702

Title :   Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium.

Descriptive Note : Final rept. 1 Jul 85-30 Sep 86,

Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTE R SCIENCES

Personal Author(s) : Meiners, L G

PDF Url : ADA194702

Report Date : 30 Sep 1986

Pagination or Media Count : 8

Abstract : The enclosed report represents work performed at UCSD on Contract N00014-84-K-0459 entitled, 'Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium', and provides a full account of the results obtained during the contract period: July 1, 1985 to September 30, 1986. The paper, 'Growth of Amorphous Germanium Nitride Films by Indirect Plasma CVD', has been published in the JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Volume 134, page 979 (1987). The remainder of this report describes additional unpublished results.

Descriptors :   *FILMS, *GERMANIUM, *NITRIDES, AMORPHOUS MATERIALS, DIELECTRICS, ELECTROCHEMISTRY, INTERFACES, LAYERS, PLASMAS(PHYSICS), SOCIETIES

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE