Accession Number : ADA195242

Title :   Power MISFETs on InP.

Descriptive Note : Rept. for 18-23 Oct 87,

Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s) : Messick, L J

PDF Url : ADA195242

Report Date : Apr 1988

Pagination or Media Count : 19

Abstract : Mesa expitaxial and planar implanted InP power MISFET's have been fabricated. At 9.7 GHz CW mesa devices demonstrated 4.5W output with 4 dB gain at 46 percent power-added efficiency with a power density of 4.5W/mm, over three times the highest value ever reported for GaAs FET's. Power output is stable with 2 percent over 167h continuous operation. Planar implanted devices exhibited 3.5W output with 5.4 dB gain, 40 percent power-added efficiency and 3.5W/mm power density at 9.7 GHz. Keywords: Semiconductor technology, Electrooptics electronics.

Descriptors :   *ELECTROOPTICS, *SEMICONDUCTORS, DENSITY, EFFICIENCY, ELECTRONICS, IMPLANTATION, OUTPUT, PLANAR STRUCTURES, POWER

Subject Categories : Solid State Physics
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE