Accession Number : ADA195242
Title : Power MISFETs on InP.
Descriptive Note : Rept. for 18-23 Oct 87,
Corporate Author : NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
Personal Author(s) : Messick, L J
PDF Url : ADA195242
Report Date : Apr 1988
Pagination or Media Count : 19
Abstract : Mesa expitaxial and planar implanted InP power MISFET's have been fabricated. At 9.7 GHz CW mesa devices demonstrated 4.5W output with 4 dB gain at 46 percent power-added efficiency with a power density of 4.5W/mm, over three times the highest value ever reported for GaAs FET's. Power output is stable with 2 percent over 167h continuous operation. Planar implanted devices exhibited 3.5W output with 5.4 dB gain, 40 percent power-added efficiency and 3.5W/mm power density at 9.7 GHz. Keywords: Semiconductor technology, Electrooptics electronics.
Descriptors : *ELECTROOPTICS, *SEMICONDUCTORS, DENSITY, EFFICIENCY, ELECTRONICS, IMPLANTATION, OUTPUT, PLANAR STRUCTURES, POWER
Subject Categories : Solid State Physics
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE