Accession Number : ADA195479
Title : Beam Assisted Fabrication of III-V/Si Monolithic Devices.
Descriptive Note : Semi-annual rept. 1 Oct 87-31 Mar 88,
Corporate Author : COLORADO STATE UNIV FORT COLLINS
Personal Author(s) : Robinson, Gary Y
PDF Url : ADA195479
Report Date : 31 Mar 1988
Pagination or Media Count : 10
Abstract : This research project is to explore two new methods for deposition of III-V semiconducting films on Si substrates. Using gas-source molecular beam epitaxy (MBE) and photo-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), GaAs and other III-V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical Characterization the suitability of the resulting III-V/Si structures are being examined for use monolithic devices. A well-confined hydrogen plasma of disk shape is employed both as a vacuum ultraviolet (VUV) lamp operating primarily at 121.5 nm and as a source of atomic hydrogen radicals. Both VUV photons and atomic hydrogen act to dissociate feedstock gases used in low-temperature ( 400 C) metalorganic chemical vapor deposition (MOCVD). Thin films have been deposited both with the confined hydrogen plasma and with an excimer laser operating at 193 nm in order to compare the two methods. Preliminary chemical and electrical properties of the films deposited via the two methods indicate the superiority of the atomic hydrogen assisted MOCVD technique.
Descriptors : *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, ALUMINUM COMPOUNDS, NITRIDES, ATOMIC STRUCTURE, CHEMICAL RADICALS, HYDROGEN, CHEMICAL PROPERTIES, ELECTRICAL PROPERTIES, DEPOSITION, ELECTRON BEAMS, ORGANOMETALLIC COMPOUNDS, FILMS, FABRICATION, CONFINEMENT(GENERAL), PLASMAS(PHYSICS), DISKS, SHAPE, EXCIMERS, LASERS, CHEMICAL REACTIONS, ORGANOMETALLIC COMPOUNDS, VAPOR DEPOSITION, THIN FILMS, SUBSTRATES, VACUUM ULTRAVIOLET RADIATION, PHOTONS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE