Accession Number : ADA195523

Title :   Low Temperature Pulsed Plasma Deposition. Part 1. A New Technique for Thin Film Deposition with Complete Gas Dissociation.

Descriptive Note : Technical rept.,

Corporate Author : STC TECHNOLOGY LTD HARLOW (ENGLAND) SYSTEMS COMPONENTS DIV

Personal Author(s) : Scarsbrook, G A ; Llewellyn, I P ; Ojha, S M ; Heinecke, R A

PDF Url : ADA195523

Report Date : 12 Apr 1988

Pagination or Media Count : 25

Abstract : Conventional continuous plasma processes, for both deposition and etching, have three limitations. Theses limitations are: 1) incomplete gas dissociation, 2) gas depletion effects, and 3) substrate heating, either by the plasma itself or as a requirement of good film quality during deposition. However, all three of these disadvantages can be overcome in a novel process, where high power Radiofrequency energy is pulsed. In this paper the pulsed plasma process and equipment is described in detail, and applications of its unique capabilities are discussed. Keywords: Pulsed plasma; This film deposition; Complete gas dissociation. (jhd)

Descriptors :   *CONTINUOUS PROCESSING, *ETCHING, *PLASMAS(PHYSICS), *PLASMA DEVICES, DEPLETION, DEPOSITION, DISSOCIATION, ENERGY, FILMS, GASES, HEATING, LIMITATIONS, PULSES, QUALITY, SUBSTRATES, THIN FILMS, SUBSTRATES, HEATING, RADIOFREQUENCY PULSES, RADIOFREQUENCY POWER

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE