Accession Number : ADA195674

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 2, 1 Jan-30 Apr 85,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195674

Report Date : 30 Apr 1985

Pagination or Media Count : 3

Abstract : An investigation into the factors influencing the electrical properties of GaAs Schottky contacts has been started. Initially it was attempted to make electrically ideal contacts to chemically etched GaAs surfaces by evaporating Au overlayers at room temperature. Although it is possible to occasionally make good diodes in this fashion it is not possible to make contacts consistently with near ideal characteristics (n is usually approx. 1.5). However, the best contact made in this way did have an ideality factor of n = 1.02 and a barrier height of theta BIV = 0.88 eV. Gallium arsenides. (mjm)

Descriptors :   BARRIERS, DIODES, ELECTRICAL PROPERTIES, GALLIUM ARSENIDES, HEIGHT, METAL CONTACTS, ROOM TEMPERATURE, SEMICONDUCTORS

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE