Accession Number : ADA195675

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 3, 1 May-31 Oct 85,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195675

Report Date : 31 Oct 1985

Pagination or Media Count : 3

Abstract : After some preliminary measurements of the transport properties of GaAs Schottky diodes, fabricated on air-cleaved and chemically etched surfaces, it became obvious that the basic assumptions underlying the 'standard' methods for analysing I-V and C-V curves required some detailed re-examination. Measurements of the Schottky barrier height using the conventional I-V and C-V techniques, (theta SB)IV and (theta SB)CV respectively, often give different results. It has been found that if the I-V curves are analysed using models that are based upon thermionic emission over the barrier alone and ignore the effect of the parallel conduction path through localised states in the depletion region then the Schottky barrier height is overestimated. By correctly taking into account the effects of recombination and trapping of majority carriers at localised states that have energies within the band gap of the semiconductor a more accurate value for theta SB is obtained. Gallium arsenides. (mjm)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, CONDUCTIVITY, DEPLETION, DIODES, GALLIUM ARSENIDES, HEIGHT, PARALLEL ORIENTATION, PATHS, REGIONS, SCHOTTKY BARRIER DEVICES, STANDARDIZATION, THERMIONIC EMISSION, TRANSPORT PROPERTIES, CONDUCTIVITY, DEPLETION, DIODES, GALLIUM ARSENIDES, HEIGHT, METAL CONTACTS, PARALLEL ORIENTATION, PATHS, REGIONS, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, STANDARDIZATION, THERMIONIC EMISSION, TRANSPORT PROPERTIES

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE