Accession Number : ADA195676

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 4, 1 Nov 85-30 Apr 86,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195676

Report Date : 30 Apr 1986

Pagination or Media Count : 3

Abstract : A detailed study has bee made of the methods that are used to estimate the magnitude of the Schottky barrier height at metal semiconductor interfaces. The results of this study have clearly demonstrated that the conventional procedures for extracting the barrier height from a measurement of a diodes I-V characteristics often provide an underestimate. Therefore a new method has been developed for analysing the I-V characteristics. The method correctly takes into account the effects of the recombination generation current, the voltage dependence of the barrier height and the effect of a large series resistance. The barrier height is obtained using a graphical method which utilizes both the forward and reverse biased characteristics. (MJM)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, BARRIERS, FORWARD AREAS, GRAPHS, HEIGHT, INTERFACES, METALS, RECOMBINATION REACTIONS, RESISTANCE, REVERSIBLE, SCHOTTKY BARRIER DEVICES, VOLTAGE, BARRIERS, BIAS, FORWARD AREAS, GRAPHS, HEIGHT, INTERFACES, METAL CONTACTS, METALS, RECOMBINATION REACTIONS, RESISTANCE, REVERSIBLE, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, VOLTAGE

Subject Categories : Electricity and Magnetism
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE