Accession Number : ADA195677

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 5, 1 May-31 Oct 86,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195677

Report Date : 31 Oct 1986

Pagination or Media Count : 3

Abstract : Substantial progress has been made on the programme during the past few months. We have studied the microscopic interactions for several selected metals with both clean and oxidized surfaces of GaAs and InP, and in a series of parallel studies we have established Schottky barrier heights by transport techniques. Data for metals on GaAs will be published shortly. Broadly speaking the data is in agreement with those published by others for metals on cleaved (110) GaAs surfaces but with important differences. One such is the case of manganese. This element strongly interacts with the clean GaAs surface and yields reproducible and well behaved Schottky barriers. Gallium arsenides, Indium phosphides. (mjm)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, INTERACTIONS, MANGANESE, METALS, MICROSCOPY, OXIDATION, PARALLEL ORIENTATION, REPRODUCIBILITY, SCHOTTKY BARRIER DEVICES, SURFACES, TRANSPORT, YIELD, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, INTERACTIONS, MANGANESE, METAL CONTACTS, METALS, MICROSCOPY, OXIDATION, PARALLEL ORIENTATION, REPRODUCIBILITY, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, SURFACES, TRANSPORT, YIELD

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE