Accession Number : ADA195678

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 6, 1 Oct 86-1 Apr 87,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195678

Report Date : 01 Apr 1987

Pagination or Media Count : 15

Abstract : Experiments involving metal contacts on a number of semiconductors have continued during the last six months. Microscopic interactions of a range of metals with clean and oxidized indium phosphide surfaces have been investigated by soft X-ray photoemission and a substantial effort has been directed towards the interpretation of the obtained. We have concentrated, in particular, on the transition metals chromium, manganese and vanadium, and also on the alkali metal Na. The transition metals are all highly reactive with clean InP, and give a range of Schottky barriers between ohmic and 0.4 eV. We have also investigated Schottky barriers for thick films of these metals deposited on clean cleaved (110) InP surfaces, by I-V and C-V techniques. Indium phosphides. (mjm)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, ALKALI METALS, CHROMIUM, INDIUM PHOSPHIDES, INTERACTIONS, METALS, MICROSCOPY, OXIDATION, PHOTOELECTRIC EMISSION, SCHOTTKY BARRIER DEVICES, SOFT X RAYS, SURFACES, THICK FILMS, TRANSITION METALS, VANADIUM, ALKALI METALS, CHROMIUM, INDIUM PHOSPHIDES, INTERACTIONS, MANGANESE, METAL CONTACTS, METALS, MICROSCOPY, OXIDATION, PHOTOELECTRIC EMISSION, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, SOFT X RAYS, SURFACES, THICK FILMS, TRANSITION METALS, VANADIUM

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE